Target Specification
TK80E08K3
)
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOS
TK80E08K3
E-Bike/UPS/Inverter
Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.
5 mΩ (typ.
) : |Yfs| = 135 S (typ.
) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) V Gate−source voltage DC (Note Drain current 1) ymbol VDSS 75
DGR 75
Rating
Unit V V V A A A W mJ A mJ
VGSS ±20 ID 80 ID 70 IDP 240 PD 200 2) EAS 107 IAR 40 EAR 20 dv/dt Tch 175 Tstg −55~175 12
DC (Note 1,4) Pulse (Not...