MBRF20100CT SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the
Schottky Barrier principle in a large area metal −to −silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low −voltage, high −frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features http://onsemi.
com
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Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transien...