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MBRF20100

Motorola
Part Number MBRF20100
Manufacturer Motorola
Description SWITCHMODE Schottky Power Rectifirers
Published Apr 26, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF20100CT/D SWITCHMODE™ Schottky Power Rectifier The S...
Datasheet PDF File MBRF20100 PDF File

MBRF20100
MBRF20100

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF20100CT/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.
• • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8″ Electrically Isolated.
No Isolation Hardware Required.
UL Recognized File #E69369(1) MBRF20100CT Motorola Preferred Device SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS 1 2 3 1 2 3 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.
9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds • Shipped 50 units per plastic tube • Marking: B20100 MAXIMUM RATINGS, PER LEG Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C Non–repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.
0 µs, 1.
0 kHz) Operating Junction and Storage Temperature Voltage Rate of Change (Rated VR) RMS Isolation Voltage (t = 1.
0 second, R.
H.
≤ 30%, TA = 25°C)(2) Per Figure 3 Per Figure 4(1) Per Figure 5 Total Device Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ, Tstg dv/dt Viso1 Viso2 Viso3 CASE 221D–02 ISOLATED TO–220 Va...


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