TK7A65D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7A65D
Switching
Regulator Applications
Ф3.
2 ± 0.
2 10 ± 0.
3
Unit: mm
2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1) ymbol VDSS VGSS ID IDP PD 2) EAS IAR 7 EAR 4.
5 Tch 150 Tstg −55 to 150 Rating 650 V ±30 V 7 28 45 W 273 mJ A mJ °C °C A Unit
2.
54 0.
64 ± 0.
15
15.
0 ± 0.
3
• • • •
Low drain-source ON-resistance: RDS (ON) = 0.
8 Ω(typ.
) High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = ...