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TK7A60W

Part Number	TK7A60W
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 4, 2020
Detailed Description	iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK7A60W，ITK7A60W ·FEATURES ·Low drain-source on-resistance: RDS(...
Datasheet	TK7A60W PDF File

Overview

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK7A60W，ITK7A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
5Ω (typ.
) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.
7 to 3.
7V (VDS = 10 V, ID=0.
35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.
0 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 30 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNI...

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