Ordering number:EN3699A
NPN Triple Diffused Planar Silicon
Transistor
2SC4630
900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (typical Cob=2.
8pF).
· Full isolation package.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2079B
[2SC4630]
10.
0 4.
5 2.
8
3.
5
3.
2
7.
2 16.
0
16.
1
0.
9 1.
2
3.
6
0.
75 1 2 3
14.
0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP...