FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
„ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A „ Max rDS(on) = 21.
8mΩ at VGS = -4.
5V, ID = -9A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 5.
4 KV typical (note 3) „ High performance trench technology for extremel...

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