Power
Transistors
2SC6012
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.
5±0.
5
(10.
0)
Unit: mm
φ 3.
2±0.
1 5˚
(4.
5)
3.
0±0.
3 5˚
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area
26.
5±0.
5
(23.
4)
(2.
0)
5˚ (4.
0) 2.
0±0.
2 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5
5.
5±0.
3
5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj ...