Part Number
|
TSM35N10 |
Manufacturer
|
Taiwan Semiconductor |
Description
|
100V N-Channel Power MOSFET |
Published
|
Jul 10, 2014 |
Detailed Description
|
TSM35N10
100V N-Channel Power MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
1...
|
Datasheet
|
TSM35N10
|
Overview
TSM35N10
100V N-Channel Power MOSFET
TO-252 (DPAK)
Pin Definition: 1.
Gate 2.
Drain 3.
Source
PRODUCT SUMMARY VDS (V)
100
RDS(on)(mΩ)
37 @ VGS =10V
ID (A)
32
Features
● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.
) Low gate charge typical @ 34nC (Typ.
) Low Crss typical @ 45pF (Typ.
)
Block Diagram
Ordering Information
Part No.
TSM35N10CP ROG
Package
TO-252
Packing
2.
5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C
Symbol
VDS VGS
Limit
100 ±20 32 26 5 4 70 35 61 83.
3 53.
3 2 1.
3 -55 to +150 -55 to +150...
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