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TSM35N10

Taiwan Semiconductor
Part Number TSM35N10
Manufacturer Taiwan Semiconductor
Description 100V N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 1...
Datasheet PDF File TSM35N10 PDF File

TSM35N10
TSM35N10


Overview
TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.
) Low gate charge typical @ 34nC (Typ.
) Low Crss typical @ 45pF (Typ.
) Block Diagram Ordering Information Part No.
TSM35N10CP ROG Package TO-252 Packing 2.
5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.
3 53.
3 2 1.
3 -55 to +150 -55 to +150...



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