Ordering number : ENN7712 2SJ655 2SJ655 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.
0 25 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain C...

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