FLM6472-4F FEATURES • • • • • • • High Output Power: P1dB = 36.
5dBm (Typ.
) High Gain: G1dB = 9.
5dB (Typ.
) High PAE: ηadd = 36% (Typ.
) Low IM3 = -46dBc@Po = 25.
5dBm Broad Band: 6.
4 ~ 7.
2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM6472-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel ...

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