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FLM6472-18F

SUMITOMO
Part Number FLM6472-18F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM6472-18F FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηad...
Datasheet PDF File FLM6472-18F PDF File

FLM6472-18F
FLM6472-18F

Overview
FLM6472-18F FEATURES • • • • • • • High Output Power: P1dB = 43.
0dBm (Typ.
) High Gain: G1dB = 9.
5dB (Typ.
) High PAE: ηadd = 37% (Typ.
) Low IM3 = -46dBc@Po = 32.
0dBm Broad Band: 6.
4 ~ 7.
2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM6472-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 83.
3 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 48.
0 and -8.
4 mA respectively with gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IK Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 7.
2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 32.
0dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.
65 IDSS (Typ.
), f = 6.
4 ~ 7.
2 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 4875mA VDS = 5V, IDS = 250mA IGS = -250µA Min.
-0.
5 -5.
0 42.
0 8.
5 -44 Limit Typ.
Max.
7.
5 7500 -1.
5 43.
0 9.
5 11.
25 -3.
0 Unit A mS V V dBm dB mA % dB dBc °C/W °C 4875 6000 37 -46 1.
6 ±0.
6 1.
8 80 G.
C.
P.
: Gain Compression Point, S.
C.
L.
: Single Carrier Level Edition 1.
2 August 2004 1 FLM647...


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