FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.
0 A, 16 mΩ April 2015 Features General Description „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.
0 A „ Max rDS(on) = 18 mΩ at VGS = 4.
5 V, ID = 7.
5 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
Applications „ Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Sourc...

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