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FDC8884

Fairchild Semiconductor
Part Number FDC8884
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 3, 2014
Detailed Description FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features ...
Datasheet PDF File FDC8884 PDF File

FDC8884
FDC8884

Overview
FDC8884 N-Channel Power Trench® MOSFET April 2015 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.
5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.
5 A „ Max rDS(on) = 30 mΩ at VGS = 4.
5 V, ID = 6.
0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application „ Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 8.
0 6.
5 25...


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