FDC8886 N-Channel Power Trench® MOSFET April 2015 FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.
5 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.
5 A „ Max rDS(on) = 36 mΩ at VGS = 4.
5 V, ID = 6.
0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application „ Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source...

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