Part Number
|
HFA9N90 |
Manufacturer
|
SemiHow |
Description
|
900V N-Channel MOSFET |
Published
|
Aug 3, 2014 |
Detailed Description
|
HFA9N90
July 2013
BVDSS = 900 V
HFA9N90
900V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche ...
|
Datasheet
|
HFA9N90
|
Overview
HFA9N90
July 2013
BVDSS = 900 V
HFA9N90
900V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
RDS(on) typ ȍ ID = 9.
0 A
TO-247
1
2
3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak...
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