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HFA9N90

Part Number	HFA9N90
Manufacturer	SemiHow
Description	900V N-Channel MOSFET
Published	Aug 3, 2014
Detailed Description	HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche ...
Datasheet	HFA9N90 PDF File

Overview

HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested RDS(on) typ ȍ ID = 9.
0 A TO-247 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25୅ unless otherwise specified Parameter Value 900 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) 9.
0* 5.
7* 36* ρͤ͑͡ (Note 2) (Note 1) (Note 1) (Note 3) 900 9.
0 28 4.
0 110 0.
88 -55 to +150 300 Power Dis...

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HFA9N90 900V N-Channel MOSFET - SemiHow

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