SUPER LOW NOISE HJ FET (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.
75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 2 V, IDS = 10 mA 4.
5 4.
0 3.
5 3.
0 NF 2.
5 2.
0 1.
5 1.
0 0.
5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18 • HIGH ASSOCIATED GAIN: 10.
5 dB Typical at 12 GHz • GATE LENGTH: 0.
3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.
Its excellent low noise figure and high associated gain make it suitable for space applications.
NEC's stringen...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)