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Part Number
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NX5330SA |
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Manufacturer
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California Eastern Labs |
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Description
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LASER DIODE |
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Published
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Aug 11, 2014 |
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Detailed Description
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LASER DIODE
NX5330SA
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
DESCRIPTION
The NX5330SA is a 1 310 nm ...
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Datasheet
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NX5330SA
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Overview
LASER DIODE
NX5330SA
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
DESCRIPTION
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.
Reflectometer (OTDR).
This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
FEATURES
• High output power • Long wavelength PO = 350 mW @ IFP = 1 000 mA*1 C = 1 310 nm
*1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1%
Document No.
PL10699EJ01V0DS (1st edition) Date Published January 2008 NS
NX5330SA
PACKAGE DIMENSION (UNIT: mm)
2
Data Sheet PL10699EJ01V0DS
NX5330SA
ORDERING INFORMATION
Part Number NX5330SA-AZ* Package 4-pin CAN with fl...
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