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NX5330SA

California Eastern Labs
Part Number NX5330SA
Manufacturer California Eastern Labs
Description LASER DIODE
Published Aug 11, 2014
Detailed Description LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm ...
Datasheet PDF File NX5330SA PDF File

NX5330SA
NX5330SA

Overview
LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.
Reflectometer (OTDR).
This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES • High output power • Long wavelength PO = 350 mW @ IFP = 1 000 mA*1 C = 1 310 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No.
PL10699EJ01V0DS (1st edition) Date Published January 2008 NS NX5330SA PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL10699EJ01V0DS NX5330SA ORDERING INFORMATION Part Number NX5330SA-AZ* Package 4-pin CAN with flat glass cap *Note Please refer to the last page of this data sheet “Compliance with EU Directives” for Pb-Free RoHs Compliance Information.
ABSOLUTE MAXIMUM RATINGS (T C = 25C, unless otherwise specified) Parameter Pulsed Forward Current Reverse Voltage Operating Case Temperature Storage Tempera...


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