Part Number
|
SSG10N10 |
Manufacturer
|
SeCoS Halbleitertechnologie |
Description
|
N-Channel MOSFET |
Published
|
Aug 12, 2014 |
Detailed Description
|
SSG10N10
Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A...
|
Datasheet
|
SSG10N10
|
Overview
SSG10N10
Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
B
SOP-8
L
D M
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
H G
Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
A
C N J
K
F
Millimeter
E
MARKING
10N10SC
Date Code
REF.
A B C D...
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