DatasheetsPDF.com

SSG10N10

Part Number	SSG10N10
Manufacturer	SeCoS Halbleitertechnologie
Description	N-Channel MOSFET
Published	Aug 12, 2014
Detailed Description	SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A...
Datasheet	SSG10N10 PDF File

Overview

SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
B SOP-8 L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available H G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
A C N J K F Millimeter E MARKING 10N10SC Date Code REF.
A B C D E F G REF.
H J K L M N Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
PACKAGE INFORMATION Package SOP-8 MPQ 3K Leader Size 13 inch S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 4 1 Symbol VDS VGS TA=25° C TA=70° C IDM PD EAS IAS TJ, TSTG ID Rating 100 ±20 10 7.
5 50 1.
6 98 41 -55~150 Unit V V A A A W mJ A ° C Total Power Dissipation @ TA=25° C Single Pulse Avalanche Energy Single Pulse Avalanche Current 3 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 RθJA 80 ° C /W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
25-Apr-2013 Rev.
A Page 1 of 4 SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current TJ=25° C Drain-Source Leakage Current TJ=55° C Static Drain-Source On-Resistance Total Gate Charge 2 2 Typ.
Max.
Unit Teat Conditions BVDSS VGS(th) IGSS IDSS 100 2.
5 - 27.
6 11.
4 7.
9 15.
6...

Similar Datasheet

SSG10N10 N-Channel MOSFET - SeCoS Halbleitertechnologie

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)