NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev.
1 — 1 August 2011 Product data sheet
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Product profile
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1 General description
Dual P-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
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3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Symbol Per
transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tam...