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NX3008PBKS

NXP Semiconductors
Part Number NX3008PBKS
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File NX3008PBKS PDF File

NX3008PBKS
NX3008PBKS

Overview
NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev.
1 — 1 August 2011 Product data sheet 1.
Product profile 1.
1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tam...


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