Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.
10 @ VGS = –10 V 0.
16 @ VGS = –4.
5 V ID (A) "4.
3 "3.
4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20...

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