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Si9405DY

TEMIC
Part Number Si9405DY
Manufacturer TEMIC
Description P-Channel Enhancement-Mode MOSFET
Published Aug 18, 2014
Detailed Description Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.10 @ VGS = –10 V 0.16 @ VGS = –4.5...
Datasheet PDF File Si9405DY PDF File

Si9405DY
Si9405DY

Overview
Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.
10 @ VGS = –10 V 0.
16 @ VGS = –4.
5 V ID (A) "4.
3 "3.
4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "4.
3 "3.
3 "20 –2.
2 2.
5 1.
6 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
Please request FaxBack document #1202.
A SPICE Model data sheet is available for this product (FaxBack document #5102).
Symbol RthJA Limit 50 Unit _C/W Siliconix S-47958—Rev.
H, 15-Apr-96 1 Si9405DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VDS v –5 V, VGS = –4.
5 V VGS = –10 V, ID = 2.
0 A VGS = –4.
5 V, ID = 2.
0 A VDS = –15 V, ID = –4.
3 A IS = –1.
25 A, VGS = 0 V –20 –5 0.
07 0.
11 6 –0.
8 –1.
6 0.
10 0.
16 A W S V –0.
5 "100 –2 –25 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse ...


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