Part Number
|
TPCP8110 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Aug 27, 2014 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8110
1. Applications
• Motor Drivers • Mobile Equipment
2. Features
(1) AEC-Q...
|
Datasheet
|
TPCP8110
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8110
1.
Applications
• Motor Drivers • Mobile Equipment
2.
Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge: QSW = 14 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 30.
4 mΩ (typ.
) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
3.
Packaging and Internal Circuit
TPCP8110
PS-8
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2013-01
2016-02-23 Rev.
3.
0
TPCP8110
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
U...
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