Part Number
|
TPCP8106 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MOSFETs |
Published
|
Aug 27, 2014 |
Detailed Description
|
TPCP8106
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8106
1. Applications
• • • Lithium-Ion Secondary Batteries Power Ma...
|
Datasheet
|
TPCP8106
|
Overview
TPCP8106
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8106
1.
Applications
• • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
1 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
PS-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power ...
Similar Datasheet