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Part Number
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TPCP8306 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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MOSFETs |
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Published
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Aug 27, 2014 |
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Detailed Description
|
TPCP8306
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8306
1. Applications
• • Notebook PCs Mobile Handsets
2. Features
...
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Datasheet
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TPCP8306
|
Overview
TPCP8306
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8306
1.
Applications
• • Notebook PCs Mobile Handsets
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -0.
2 mA)
3.
Packaging and Internal Circuit
1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1
PS-8
1
2010-08-03 Rev.
1.
0
TPCP8306
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissi...
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