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TPCP8301

Toshiba Semiconductor
Part Number TPCP8301
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Feb 20, 2010
Detailed Description TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ ) com TPCP8301 Lithium Ion ...
Datasheet PDF File TPCP8301 PDF File

TPCP8301
TPCP8301

Overview
TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ ) com TPCP8301 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • • Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.
) High forward transfer admittance: |Yfs| = 14 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement model: Vth = −0.
5 to −1.
2V (VDS = −10 V, ID = −200 μA) Unit: mm 0.
33±0.
05 0.
05 M A 8 5 2.
4±0.
1 0.
475 1 4 0.
65 2.
9±0.
1 B A 0.
05 M B 0.
8±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) G...


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