Part Number
|
TPCC8106 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Aug 30, 2014 |
Datasheet
|
TPCC8106
|
Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)...
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