MOSFETs Silicon P-Channel MOS (U-MOS�)
TPCC8107
1.
Applications
• Motor Drivers • DC-DC Converters • Switching Voltage
Regulators
2.
Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.
5 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1.
0 mA)
3.
Packaging and Internal Circuit
TPCC8107
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2017-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2023-12-11 Rev.
5.
0
TPCC8107
4.
Absolute Maximum Ratings (Note) (Ta = 25� unless otherwise specified)
Characteristics
Symb...