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Part Number
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TPCC8131 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon P-Channel MOSFET |
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Published
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Aug 30, 2014 |
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Detailed Description
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MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8131
1. Applications
• Lithium-Ion Secondary Batteries • Power Management Swi...
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Datasheet
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TPCC8131
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Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCC8131
1.
Applications
• Lithium-Ion Secondary Batteries • Power Management Switches
2.
Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.
5 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
2 mA)
3.
Packaging and Internal Circuit
TPCC8131
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation...
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