Part Number
|
TPC8132 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Sep 1, 2014 |
Detailed Description
|
TPC8132
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8132
1. Applications
• • Lithium-Ion Secondary Batteries Power Manage...
|
Datasheet
|
TPC8132
|
Overview
TPC8132
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8132
1.
Applications
• • Lithium-Ion Secondary Batteries Power Management Switches
2.
Features
(1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
2 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single...
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