GT50J121
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT50J121
High Power Switching Applications Fast Switching Applications
• • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.
05 µs (typ.
) • Low switching loss : Eon = 1.
30 mJ (typ.
) : Eoff = 1.
34 mJ (typ.
) • Low saturation Voltage: VCE (sat) = 2.
0 V (typ.
) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 50 100 240 150 −55 to 150 Uni...