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GT50J121

Toshiba Semiconductor
Part Number GT50J121
Manufacturer Toshiba Semiconductor
Description silicon N-channel IGBT
Published Sep 3, 2014
Detailed Description GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fa...
Datasheet PDF File GT50J121 PDF File

GT50J121
GT50J121

Overview
GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.
05 µs (typ.
) • Low switching loss : Eon = 1.
30 mJ (typ.
) : Eoff = 1.
34 mJ (typ.
) • Low saturation Voltage: VCE (sat) = 2.
0 V (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 50 100 240 150 −55 to 150 Uni...


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