GT50J122
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.
16 μs (typ.
) (IC = 60A) Low saturation voltage: VCE (sat) = 1.
9 V (typ.
) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Collector power dissipation Junction temperature Storage temperature range @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±25 31 50 120 62 156 150 −55 to 150 Unit ...