TPHR9003NL
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPHR9003NL
1.
Applications
• • Switching Voltage
Regulators DC-DC Converters
2.
Features
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 16 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 1.
1 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1.
0 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power di...