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TPHR9003NL

Toshiba
Part Number TPHR9003NL
Manufacturer Toshiba
Description MOSFETs
Published Sep 3, 2014
Detailed Description TPHR9003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPHR9003NL 1. Applications • • Switching Voltage Regulators DC-DC C...
Datasheet PDF File TPHR9003NL PDF File

TPHR9003NL
TPHR9003NL

Overview
TPHR9003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPHR9003NL 1.
Applications • • Switching Voltage Regulators DC-DC Converters 2.
Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 16 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 1.
1 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25 ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 220 60 200 78 2.
8 1.
6 889 60 150 -55 to 150 mJ A  W A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2013-03-01 Rev.
1.
0 TPHR9003NL 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 1.
60 44.
6 78.
1 Un...


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