MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60DA
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 1.
7 Ω (typ.
) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK4P60DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
©2015 Toshiba Corporation
1
Start of commercial production
2009-12
2015-08-03 Rev.
3.
0
TK4P60DA
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source volta...