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TK4P60DA

Toshiba Semiconductor
Part Number TK4P60DA
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK4P60DA PDF File

TK4P60DA
TK4P60DA

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DA 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
7 Ω (typ.
) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK4P60DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2009-12 2015-08-03 Rev.
3.
0 TK4P60DA 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 3) (Note 3) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR EAR IDR IDRP Tch Tstg 600 V ±30 3.
5 A 14 80 W 132 mJ 3.
5 A 8 mJ 3.
5 A 14 150  -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 18.
9 mH, RG = 25 Ω...


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