MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60D
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 1.
4 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 2.
5 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK4P60D
1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S)
DPAK
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
600
V
VGSS
±30
Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse ...