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Part Number
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TJ150F06M3L |
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Manufacturer
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Toshiba Semiconductor |
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Description
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MOSFETs |
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Published
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Sep 6, 2014 |
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Datasheet
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TJ150F06M3L
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Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: D...
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