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TJ150F06M3L

Toshiba Semiconductor
Part Number TJ150F06M3L
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications • • Relay Drivers Motor Drivers 2. Feat...
Datasheet PDF File TJ150F06M3L PDF File

TJ150F06M3L
TJ150F06M3L

Overview
TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1.
Applications • • Relay Drivers Motor Drivers 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.
3 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3...


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