Part Number
|
HCTS30MS |
Manufacturer
|
Intersil Corporation |
Description
|
Radiation Hardened 8-Input NAND Gate |
Published
|
Mar 23, 2005 |
Detailed Description
|
HCTS30MS
August 1995
Radiation Hardened 8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDI...
|
Datasheet
|
HCTS30MS
|
Overview
HCTS30MS
August 1995
Radiation Hardened 8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A 1 B 2 C 3 D 4 E 5 F 6 GND 7 14 VCC 13 NC 12 H 11 G 10 NC 9 NC 8 Y
Features
• 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: 100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: 1 x • Dose Rate Upset 10
10
1012
RAD (Si)/s
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.
5V to 5.
5V • LSTTL I...
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