SSM6N29TU
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type
SSM6N29TU
High-Speed Switching Applications
• • • 1.
8 V drive N-ch 2-in-1 Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.
8 V) Ron = 178 mΩ (max) (@VGS = 2.
5 V)
0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3-0.
05
Unit V μA μA V S mΩ pF pF pF ns V
Unit: mm
Ron = 143 mΩ (max) (@VGS = 4.
0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 0.
8 1.
6 500 150 − 55 to 150 Unit V V A mW °C °C
1 2 3
6 5 4
0.
7±0.
0...