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SSM6N29TU

Part Number	SSM6N29TU
Manufacturer	Toshiba Semiconductor
Description	Field Effect Transistor
Published	Sep 14, 2014
Detailed Description	SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications • • • ...
Datasheet	SSM6N29TU PDF File

Overview

SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications • • • 1.
8 V drive N-ch 2-in-1 Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.
8 V) Ron = 178 mΩ (max) (@VGS = 2.
5 V) 0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3-0.
05 Unit V μA μA V S mΩ pF pF pF ns V Unit: mm Ron = 143 mΩ (max) (@VGS = 4.
0 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 0.
8 1.
6 500 150 − 55 to 150 Unit V V A mW °C °C 1 2 3 6 5 4 0.
7±0.
0...

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SSM6N29TU Field Effect Transistor - Toshiba Semiconductor

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