Part Number
|
Si4412DY |
Manufacturer
|
TEMIC |
Description
|
N-Channel Enhancement-Mode MOSFET |
Published
|
Sep 17, 2014 |
Detailed Description
|
Si4412DY
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
30
rDS(on) (W)
0.028 @ VGS = 10 V 0.042 @ VGS = 4.5 ...
|
Datasheet
|
Si4412DY
|
Overview
Si4412DY
N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
30
rDS(on) (W)
0.
028 @ VGS = 10 V 0.
042 @ VGS = 4.
5 V
ID (A)
"7.
0 "5.
8
D D D D
SO-8
S S S G 1 2 3 4 Top View S S S N-Channel MOSFET 8 7 6 5 D D D D G
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "20 "7.
0 "5.
8 "30 2.
3 2.
5 1.
6 –55 to 150
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
M...
Similar Datasheet