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Si4412DY

Part Number	Si4412DY
Manufacturer	TEMIC
Description	N-Channel Enhancement-Mode MOSFET
Published	Sep 17, 2014
Detailed Description	Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.028 @ VGS = 10 V 0.042 @ VGS = 4.5 ...
Datasheet	Si4412DY PDF File

Overview

Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.
028 @ VGS = 10 V 0.
042 @ VGS = 4.
5 V ID (A) "7.
0 "5.
8 D D D D SO-8 S S S G 1 2 3 4 Top View S S S N-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "7.
0 "5.
8 "30 2.
3 2.
5 1.
6 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter M...

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